PART |
Description |
Maker |
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|
HYM72V32736BLT8-K HYM72V32736BT8-K HYM72V32736BT8- |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM - Unbuffered DIMM 256MB x64 SDRAM Module
|
Hynix Semiconductor
|
UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 |
x8 SDRAM x4 SDRAM x4内存 x16 SDRAM x16内存
|
NEC, Corp. Infineon Technologies AG
|
HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块) 3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块(3.3 256M位内存模块) 3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块(3.3V28兆位内存模块
|
SIEMENS AG
|
UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM x8 SDRAM x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
NT256D64S8HA0G-8B NT256D64S8HA0G NT256D64S8HA0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 16Mx8 SDRAM 184pin Two Bank Unbuffered DDR SDRAM MODULE 184pin两个银行无缓冲DDR SDRAM内存模块
|
NANYA List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
|
HY57V28820HCT-H HY57V28820HCLT-K |
x8 SDRAM From old datasheet system SDRAM,4X4MX8,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
HY57V561620HLT HY57V561620HT-H |
x16 SDRAM IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
GMM2649233EFTG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|